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KMID : 0380319930520010087
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Journal of Korean Research Institute for Better Living
1993 Volume.52 No. 1 p.87 ~ p.92
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Deposition and Characterization of the Surface Morphology of CulnSe2 Thin Films
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Abstract
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Abstract-Micro Raman Spectroscopy and Auger Electron Spectorscopy have been used to investigate polycrystalline CuInSe2 grains of differnet morphology. The grains larger than 2㎛found on films annealed at 315℃ show Raman peaks at 174㎝E-1 and
258㎝E-1.
In2O3 is found to have' formed on the surface and inside the grains the Cu:Se ratio is about 1 : 1. The 258㎝E-1 peak is thought to originate from a copper-selenide phase. 1-2㎛size grains found on films annealed at temperatures below 305℃show a
Raman
peak at 174㎝E-1 and an additional peak at 186㎝E-1 peak is thought to originate from either a Se excessive or a Cu, In deficient phase when compared to stoichiometric CuInSe2 in the grain. Considering these properites, the optimum annealing
conditions
and surface morphology were obtained. Films annealed under such conditions consisted of clusters of crystals smaller than 1㎛ and showed a clear Raman peak at 174㎝E-1.
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KEYWORD
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